isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector-Emitter saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • General purpose applications

文件：250.13 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -2.0V(Max) @IC= -4A APPLICATIONS · Low frequency amplifier

文件：324.09 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTC2022D/L.

文件：395.7 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE. • Complementary to KTC2025D/L

文件：399.48 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.4V(Max) @IC= -0.5A APPLICATIONS · Low frequency amplifier

文件：305.21 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.4V(Max) @IC= -0.5A APPLICATIONS · Low frequency amplifier

文件：324.25 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE. • Complementary to KTC2025D/L

文件：399.48 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

isc Silicon PNP Power Transistors

DESCRIPTION • Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) • Complement to Type KTC2026 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Desi

文件：277.16 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low collector saturation voltage, complementary to KTC2026. Applications General purpose amplifier.

文件：912.51 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

EPITAXIAL PLANAR PNP TRANSISTOR (INDUSTRIAL USE, GENERAL PURPOSE)

INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Complementary to KTC2026.

文件：338.26 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)