EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES ● Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.4V(Max.) (IC=-4A) ● High Current and High fT : IC=-8A, fT=130MHz. ● Excellent Linearity of hFE ● High Speed Switching Time. : fT=20nS (Typ.) ● Complementary to KTC1804D/L APPLICATION

文件：407.74 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.5V(Max) @IC= -4A APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers

文件：305.64 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.5V(Max) @IC= -4A APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers

文件：324.69 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -0.5A APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers

文件：280.9 Kbytes 页数：2 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTC2983D/L

文件：399.18 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTC2983D/L

文件：399.18 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -0.5A APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers

文件：299.94 Kbytes 页数：2 Pages

ISC

无锡固电

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low Collector Saturation Voltage ● High Power Dissipation

文件：3.61696 Mbytes 页数：3 Pages

JIANGSU

长电科技

EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

文件：347.91 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100 320 (VCE=-2V, IC=-0.5A). • Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).

文件：395.26 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)