EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100 320 (VCE=-2V, IC=-0.5A). • Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).

文件：395.26 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

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EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

KEC

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EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100 320 (VCE=-2V, IC=-0.5A). • Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).

文件：395.26 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100 320 (VCE=-2V, IC=-0.5A). • Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).

文件：395.26 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

文件：400.89 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

文件：400.89 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

General Purpose Transistor, DPAK, -20V, -5A

• hFE=100~320 (VCE=-2V, Ic=-0.5A)\n• Low Collector Saturation Voltage. : VCE(sat)=-0.5V (Ic=-3A, IB=-75mA).;

KEC

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Bipolar Transistor

● hFE=100•320 (VCE=-2V, Ic=-0.5A).\n● Low Collector Saturation Voltage. : VCE(sat)=-0.5V (Ic=-3A, \n  IB=-75mA).;

KEC

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