EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES ● Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.4V(Max.) (IC=-4A) ● High Current and High fT : IC=-8A, fT=130MHz. ● Excellent Linearity of hFE ● High Speed Switching Time. : fT=20nS (Typ.) ● Complementary to KTC1804D/L APPLICATION

文件：407.74 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.5V(Max) @IC= -4A APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers

文件：305.64 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR

HIGH CURRENT SWITCHING APPLICATION.APPLICATION\nRelay drivers, high-speed inverters, converters, and other\ngeneral high-current switching applications.FEATURES\n● Low Collector Emitter Saturation Voltage.\n    : VCE(sat)=-0.4V(Max.) (IC=-4A)\n● High Current and High fT\n    : IC=-8A, fT=130MHz.\n● ● Low Collector Emitter Saturation Voltage.\n    : VCE(sat)=-0.4V(Max.) (IC=-4A)\n● High Current and High fT\n    : IC=-8A, fT=130MHz.\n● Excellent Linearity of hFE\n● High Speed Switching Time.\n    : fT=20nS (Typ.)\n● Complementary to KTC1804D/L;

KEC

开益禧

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.5V(Max) @IC= -4A APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers

文件：324.69 Kbytes 页数：3 Pages

ISC

无锡固电

150 MHz RGB Video Amplifier System

文件：399.37 Kbytes 页数：20 Pages

NSC

国半

150 MHz RGB Video Amplifier System

文件：399.37 Kbytes 页数：20 Pages

NSC

国半