EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTC2028.

文件：330.46 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) ·Low Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A) APPLICATIONS · Designed for use in general purpose power amplifier and switching applications

文件：301.95 Kbytes 页数：2 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.).

文件：362.95 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT)

HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATION. FEATURES • High Voltage : VCEO=-200V. • High Transition Frequency : fT=150MHz(Typ.). • Low Collector Output Capacitance : Cob=2.6pF(Typ.). • Complementary to KTC3467.

文件：341.39 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR(HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER,CATHODE RAY TUBE BRIGHTNESS CONTROL)

HIGH VOLTAGE CONTROL APPLICATIONS. PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. FEATURES • High Voltage : VCBO=-300V, VCEO=-300V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) • Small Collector Output Capacitance : Cob=5.5pF(Typ.) • Comp

文件：398.13 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

IEEE 802.3af PoE PD with Integrated DC-DC Controller and 13W Power FET

Features • Compliant to IEEE® Std. 802.3af-2003 • Supports Type 1 operation for IEEE® 802.3at- 2009 and IEEE® 802.3bt-2018 • Integrated DC-DC Controller with robust 150V, 0.7Ω typ. supporting both isolated and nonisolated applications • Low RDS_ON Hot-Swap FET, 0.49Ω typ. • Adjustable sw

文件：1.1311 Mbytes 页数：22 Pages

KINETIC

芯凯电子

丝印：NXYWZaabbccc；Package：TQFN44-16；IEEE 802.3af PoE PD with Integrated DC-DC Controller and 13W Power FET

Features • Compliant to IEEE® Std. 802.3af-2003 • Supports Type 1 operation for IEEE® 802.3at- 2009 and IEEE® 802.3bt-2018 • Integrated DC-DC Controller with robust 150V, 0.7Ω typ. supporting both isolated and nonisolated applications • Low RDS_ON Hot-Swap FET, 0.49Ω typ. • Adjustable sw

文件：1.1311 Mbytes 页数：22 Pages

KINETIC

芯凯电子

IEEE 802.3at PoE PD with Integrated DC-DC Controller

Features • Fully supports both IEEE® Std. 802.3af-2005 and IEEE® Std. 802.3at-2009 • “2-Event” classification for 802.3at higher power PDs • Robust Type 2 PSE detector with proprietary digital filtering line noise eliminating false positives • IEC 61000-4-2/3/4/5/6 requirements for EMC

文件：980.81 Kbytes 页数：22 Pages

KINETIC

芯凯电子

丝印：OGYWZ；Package：QFN55-20；IEEE 802.3at PoE PD with Integrated DC-DC Controller

Features • Fully supports both IEEE® Std. 802.3af-2005 and IEEE® Std. 802.3at-2009 • “2-Event” classification for 802.3at higher power PDs • Robust Type 2 PSE detector with proprietary digital filtering line noise eliminating false positives • IEC 61000-4-2/3/4/5/6 requirements for EMC

文件：980.81 Kbytes 页数：22 Pages

KINETIC

芯凯电子

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES ● Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.4V(Max.) (IC=-4A) ● High Current and High fT : IC=-8A, fT=130MHz. ● Excellent Linearity of hFE ● High Speed Switching Time. : fT=20nS (Typ.) ● Complementary to KTC1804D/L APPLICATION

文件：407.74 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)