多波段接收芯片

The KT0913L-D4 is KT Micro’s latest generation of proprietary fully integrated AM/FM receiver chip that upgrades the performance, improve the user experience and ease integration and manufacturing efforts. The new features includes the additional audio input, independent status indicator, improved E • Worldwide full band FM/AM support\n      FM: 32MHz-110MHz\n      AM: 500KHz-1710KHz\n• Fully integrated frequency synthesizer with no external components\n• Support analog mechanical tuning\n• High Sensitivity\n      1.6uVEMF for FM\n      16uVEMF for AM\n• High Fidelity\n      SNR (FM/AM): 60dB/5;

KTMicro

昆腾微

L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm High power gain Gp=13dB(TYP.) @f=1.9GHz High power added efficiency nadd=48(TYP.

文件：44.08 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：113.35 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC Line 900 MHz GaAs Integrated Power Amplifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48 minimum power added efficiency under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior perform

文件：140.57 Kbytes 页数：8 Pages

Motorola

摩托罗拉