FM/AM/SW/LW接收器

KT0913是一颗具有完全自主知识专利的全集成数字式多波段收音芯片，具有高品质音频性能，同时集成了频率振荡器和音量控制器，外部只需要极少的元器件，从而极大地简化设计周期，降低bom成本，现有机型外壳无需任何更改。\n\n 由于采用独特的调谐方式，使得KT0913的短天线接受能力大幅提高。KT0913还有一个显著特点是待机时无需外部存储芯片即可保存电台和音量信息，而且可以根据不同的MCU主控芯片配置参考时钟频率，频率覆盖范围高达32.768KHz～26MHz，从而进一步降低了产品成本。另外KT0913的工作电流只有22mA,可以工作在两节普通AAA电池下。\n\n 凭借高集成度、 ◆ 高灵敏度\n -FM:1.6uVEMF\n -AM:16uVEMF \n -SW：13uVEMF\n◆ 高保真度\n -FMSNR: 60dB\n -AMSNR: 55dB\n -THD: 0.3%\n◆ 全球波段\n -FM:32MHz～110MHz\n -AM:500KHz～1710KHz\n -SW：1.6MHz~32MHz \n -LW：150KHz~280KHz \n◆ 小封装低功耗\n -工作电流：22mA\n -静态电流：;

KTMicro

昆腾微

多波段接收芯片

The KT0913L-D4 is KT Micro’s latest generation of proprietary fully integrated AM/FM receiver chip that upgrades the performance, improve the user experience and ease integration and manufacturing efforts. The new features includes the additional audio input, independent status indicator, improved E • Worldwide full band FM/AM support\n      FM: 32MHz-110MHz\n      AM: 500KHz-1710KHz\n• Fully integrated frequency synthesizer with no external components\n• Support analog mechanical tuning\n• High Sensitivity\n      1.6uVEMF for FM\n      16uVEMF for AM\n• High Fidelity\n      SNR (FM/AM): 60dB/5;

KTMicro

昆腾微

L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm High power gain Gp=13dB(TYP.) @f=1.9GHz High power added efficiency nadd=48(TYP.

文件：44.08 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：113.35 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC Line 900 MHz GaAs Integrated Power Amplifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48 minimum power added efficiency under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior perform

文件：140.57 Kbytes 页数：8 Pages

Motorola

摩托罗拉