250V N-Channel MOSFET

文件：1.5824 Mbytes 页数：8 Pages

KERSEMI

TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

文件：253.49 Kbytes 页数：10 Pages

Motorola

摩托罗拉

TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：208.49 Kbytes 页数：8 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.36 Kbytes 页数：2 Pages

ISC

无锡固电