MOSFET

Kwansemi

冠禹半导体

N沟道MOSFET

Kwansemi

冠禹半导体

NPN (LOW FREQUENCY LOW NOISE AMPLIFIER)

LOW FREQUENCY LOW NOISE AMPLIFIER Collector-Base Voltage Vcbo=50V Low Noise Lwvwl NL = 40mV (Max)

文件：113.83 Kbytes 页数：3 Pages

Samsung

三星

Power Amplifier Applications

Power Amplifier Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Built in a Damper Diode at E-C • Darlington TR • Complement to KSB907

文件：39.42 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 40V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 2A · Complement to KSB907 APPLICATIONS · Low frequency amplifier

文件：295.82 Kbytes 页数：2 Pages

ISC

无锡固电