BAT54TDW

Marking：KLA；Package：SOT-363；Surface Mount Schottky Barrier Diodes Arrays

Features: *ExtremelyFastSwitchingSpeed. *LowForwardVoltage. *VerySmallConductionLosses. *PNJunctionGuardRingforTransientandESDProtection.

BAT54TW

Marking：KLA；Package：SOT-363；SOT-363 Plastic-Encapsulate Diodes

FEATURES »LowForwardVoltageDrop »FastSwitching »SmallSurfaceMountPackage »PNJunctionGuardRingforTransientandESDProtection »AvailableinLeadFreeVersion

BAT54TW

Marking：KLA；Package：SOT-363；SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4)

BAT54TW

Marking：KLA；Package：SOT-363；SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devise(Note3)

BAT54TW

Marking：KLA；Package：SOT-363；Sub-miniature Schottky Diodes & Arrays in

KeyFeatures 1.Industry-standardSchottkydiodedevicesinarrayconfigurations. 2.30Volt,40Voltand70VoltVrrm. 3.Popularconfigurations: ❐TripleSchottky,Isolated ❐4Schottkysarrayedastwocommoncathodecircuits ❐4Schottkysarrayedastwocommonanodecircuits

BAT54TW-7-F

Marking：KLA；Package：SOT-363；SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4)

CDBV6-54T-HF

Marking：KLA；Package：SOT-363；Small Signal Schottky Diodes

Features -Lowforwardvoltagedrop. -Fastswitching. -Smallsurfacemountpackage. -PNjunctionguardringfortransientandESD protection.

SSM6J808R

Marking：KLA；Package：TSOP6F；MOSFETs Silicon P-Channel MOS

1.Applications •PowerManagementSwitches 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4-Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=28mΩ(typ.)(VGS=-10V) RDS(ON)=35mΩ(typ.)(VGS=-4.5V) RDS(ON)=38mΩ(typ.)(VGS=-4V)

SSM6J808RLF

Marking：KLA；Package：TSOP6F；MOSFETs Silicon P-Channel MOS

1.Applications •PowerManagementSwitches 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4-Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=28mΩ(typ.)(VGS=-10V) RDS(ON)=35mΩ(typ.)(VGS=-4.5V) RDS(ON)=38mΩ(typ.)(VGS=-4V)

SSM6J808RLXGF

Marking：KLA；Package：TSOP6F；MOSFETs Silicon P-Channel MOS

1.Applications •PowerManagementSwitches 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4-Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=28mΩ(typ.)(VGS=-10V) RDS(ON)=35mΩ(typ.)(VGS=-4.5V) RDS(ON)=38mΩ(typ.)(VGS=-4V)