IGBT(FRD内置)

KGF65A4L，是650V Field Stop型的垂直沟道工艺的IGBT。\n采用了独特的垂直构造减少了寄生容量，既实现低饱和压降，又减少了开关损耗。\nIGBT的低损耗可以实现整机设备的高效率。 ・低饱和电压\n・高速开关\n・内置FRD\n・符合RoHS指令;

Sanken

三垦

Trench Field Stop IGBTs with Fast Recovery Diode

文件：796.41 Kbytes 页数：15 Pages

Sanken

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Trench Field Stop IGBTs with Fast Recovery Diode

文件：769.1 Kbytes 页数：15 Pages

Sanken

三垦

Trench Field Stop IGBTs with Fast Recovery Diode

文件：769.1 Kbytes 页数：15 Pages

Sanken

三垦

VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode

Description The KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit. Features ● Lo

文件：730.49 Kbytes 页数：15 Pages

Sanken

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