PRE-WIRED STRAIN GAGES

U No Soldering at the Measuring Point U Each Gage has 50 mm of PTFE Cable before Transitioning to AWG 28 Leads to Prevent Leads from Adhering During Installation U Short, Medium and Long Grid Linear Gages U Short and Medium Grid XY Gages (T-Rosettes) U Short and Medium Grid 0°/45°/90° Pl

文件：1.65587 Mbytes 页数：5 Pages

OMEGA

丝印：KFH；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V)

文件：413.4 Kbytes 页数：9 Pages

TOSHIBA

东芝

FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星