N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=650V, ID

文件：388.95 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：388.95 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Planar MOSFETs, TO-220IS(1), 650V, 7A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using switching mode power supplies.;

KEC

开益禧

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=650V, ID

文件：584.66 Kbytes 页数：7 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10759 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Advanced high cell denity trench technology for ultra RDS(ON)

文件：666.68 Kbytes 页数：4 Pages

KERSEMI