KSM7N65

Advanced high cell denity trench technology for ultra RDS(ON)

KSM7N65C

650V N-Channel MOSFET

7N65

7Amps,650Volts7Amps,650Volts

DESCRIPTION TheUTC7N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

7N65

7.4Amps,650VoltsN-CHANNELPOWERMOSFET

7N65

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

7N65

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

7N65

650VN-ChannelPowerMOSFET

Features ●RDS(ON)

7N65

DrainCurrentID=7A@TC=25C

•FEATURES •DrainCurrentID=7A@TC=25℃ •DrainSourceVoltage :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V •AvalancheEnergySpecified •FastSwitching •APPLICATIONS •Highspeedswitchingapplicationsinpowersupplies •PWM

7N65

N-CHANNELPOWERMOSFET

■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch

7N65

7.4A,650VN-CHANNELPOWERMOSFET

7N65

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

7N65

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description 650VN-CHANNELENHANCEMENTMODEPOWERMOSFET Features RDS(ON)=1.27Ω(Max.)@VGS=10V,ID=3.5A Fastswitching 100avalanchetested Improveddv/dtcapability Application DC-DC&DC-ACConverters UninterruptiblePowerSupply(UPS) SwitchModeLowPowerSu

7N65

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)

7N65A

7A650VN-channelenhancementmodefieldeffecttransistor

7A650VN-channelenhancementmodefieldeffecttransistor Performancecharacteristics: ♦Fastswitchingspeed ♦Lowon-resistance ♦Lowreversetransfercapacitance ♦Lowgatecharge ♦100singlepulseavalancheenergytest ♦Improveddv/dtcapability

7N65A

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

7N65B

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

7N65C

650VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

7N65D

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

7N65F

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

7N65F

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability