MDF7N60BTH

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MDF7N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF7N60TH

N-ChannelMOSFET600V,7A,1.15(ohm)

MDF7N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP7N60

N-ChannelMOSFET600V,7A,1.15(ohm)

MDP7N60B

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MDP7N60BTH

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MDP7N60TH

N-ChannelMOSFET600V,7A,1.15(ohm)

MDP7N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MGP7N60E

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbothahightemperatureshortcircuitcapabilityandalowVCE(on)