| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=0.70A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 | ESTEK | ||
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
详细参数
- 型号：
KF2N60
- 制造商：
KEC
- 制造商全称：
KEC(Korea Electronics)
- 功能描述：
N CHANNEL MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
KEC |
19+ |
DPAK |
12500 |
KEC一级代理 原装正品长期供货 |
询价 | ||
K |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
KEC |
2020+ |
TO-252 |
39510 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
KEC |
22+ |
SOT-252 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
K |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
询价 | ||
KEC |
2022+ |
SOT252 |
32000 |
原厂代理 终端免费提供样品 |
询价 | ||
K |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
询价 | ||
KEC |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
KEC |
23+ |
TO-252 |
89630 |
当天发货全新原装现货 |
询价 |
相关规格书
更多- KF2N60F
- KF2N60L
- KF3002-GD31A
- KF3002-GM50A
- KF3003-GL50A
- KF3004-GD31A
- KF3004-GL50A
- KF3006-GL50A
- KF3008-GD34A
- KF30B
- KF30BDT
- KF30BD-TR
- KF30BDT-TR
- KF319S
- KF325AS
- KF325V
- KF33B
- KF33BDT
- KF33BD-TR
- KF33BDT-TR
- KF347_Q
- KF351_Q
- KF353_Q
- KF35BDT-TR
- KF3N40D
- KF3N50DZ
- KF3N50FZ
- KF3N60D
- KF3N60I
- KF-4
- KF402B
- KF402BV
- KF406BS
- KF40B
- KF40BDT
- KF40BD-TR
- KF40BDT-TR
- KF410B
- KF410BV
- KF414BS
- KF415
- KF418B
- KF418BV
- KF422B
- KF422BV
相关库存
更多- KF2N60I
- KF2N60P
- KF3002-GL50A
- KF3003-GD31A
- KF3003-GM50A
- KF3004-GF11A
- KF3004-GM50A
- KF3006-GM50A
- KF3008-GR16A
- KF30BD
- KF30BDTR
- KF30BDTTR
- KF-30KIT
- KF325
- KF325S
- KF33
- KF33BD
- KF33BDTR
- KF33BDTTR
- KF347
- KF351
- KF353
- KF35BDT
- KF-38R5-09P0300
- KF3N40W
- KF3N50FS
- KF3N50IZ
- KF3N60F
- KF3N60P
- KF40
- KF402BS
- KF406B
- KF406BV
- KF40BD
- KF40BDTR
- KF40BDTTR
- KF4107
- KF410BS
- KF414B
- KF414BV
- KF415S
- KF418BS
- KF422
- KF422BS
- KF422S
