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KF2N60I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS

KECKEC CORPORATION

KEC株式会社

KF2N60I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS

KECKEC CORPORATION

KEC株式会社

2N60

2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2N60

N2Amps竊?00VoltsN-ChannelMOSFET

Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

2N60

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2N60

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

2N60

2A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

2N60

2A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

2N60

2A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

2N60

2A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

2N60

2A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

2N60

2A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

2N60

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2N60

2A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2N60

2Amps,600VoltsN-CHANNELMOSFET

FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

2N60

TO-251Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

2N60

N-CHANNELMOSFET

DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

2N60

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell2N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof2A,fastswitchi

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

2N60

FastSwitching

•FEATURES •Draincurrent:ID=2A@TC=25℃ •Drainsourcevoltage:VDSS=600V(Min) •Staticdrain-sourceon-resistance:RDS(on)=5.0Ω(Max) •Fastswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    KF2N60I

  • 制造商:

    KEC

  • 制造商全称:

    KEC(Korea Electronics)

  • 功能描述:

    N CHANNEL MOS FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
KEC
19+
IPAK
12000
KEC一级代理 原装正品长期供货
询价
KEC
23+
TO-251
12300
全新原装真实库存含13点增值税票!
询价
KEC
2020+
TO-251
40050
公司代理品牌,原装现货超低价清仓!
询价
KEC
21+
TO251
19000
只做正品原装现货
询价
KEC
23+
TO-251
10000
公司只做原装正品
询价
KEC
23+
TO-251IPAK(1)
50000
全新原装正品现货,支持订货
询价
KEC
2022
TO-251IPAK(1)
80000
原装现货,OEM渠道,欢迎咨询
询价
KEC
2022+
TO-251
50000
原厂代理 终端免费提供样品
询价
KEC
23+
TO-251
6000
原装正品,支持实单
询价
KEC
22+21+
TO-251IPAK(1
2600
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
更多KF2N60I供应商 更新时间2024-4-28 12:12:00