SILICON EPITAXIAL PLANAR DIODE

TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. FEATURES • Low Series Resistance : rs=0.3(TYP.). • Small Package : SOT-23.

文件：71.98 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

SILICON EPITAXIAL PLANAR DIODE

文件：404.59 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

RF Diode

. Low Series Resistance : rs=0.3ohm (typ.).. Small Package : SOT-23.;

KEC

开益禧

Silicon MOS IC

■ Features ● Allowing downsizing of the sets through the reduction of a parts count resulting from the voltage step-up utilizing a coil instead of a transformer and employing the thin surface mounting package. ● Allowing low voltage drive (adaptable to a small and low-voltage battery), or VC

文件：34.21 Kbytes 页数：2 Pages

PANASONIC

松下

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 ×2SC5004)

文件：66.21 Kbytes 页数：16 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 ×2SC5004)

文件：66.21 Kbytes 页数：16 Pages

NEC

瑞萨