SILICON EPITAXIAL PLANAR DIODE

TV TUNING. FEATURES • High Capacitance Ratio • Low Series Resistance

文件：42.58 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

SILICON EPITAXIAL PLANAR DIODE

文件：358.96 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

ESC TV Tuning 32V 39Pf 43pF 2.3 2.6 15.7

• High Capacitance Ratio• Low Series Resistance;

KEC

开益禧

Silicon planar type

文件：41.87 Kbytes 页数：2 Pages

PANASONIC

松下

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

文件：109.68 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

文件：24.87 Kbytes 页数：2 Pages

NTE