SILICON EPITAXIAL PLANAR DIODE

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KEC

KEC(Korea Electronics)

SILICON EPITAXIAL PLANAR DIODE

文件：350.72 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

VCO FOR UHF/VHF BAND.\n\nFEATURES\nHigh Capacitance Ratio : C1V/C4V=2.0(Min.)\nLow Series Resistance : rs=0.45 (Max.) High Capacitance Ratio : C1V/C4V=2.0(Min.)\nLow Series Resistance : rs=0.45 (Max.);

KEC

P-Channel 1.8V Specified PowerTrench MOSFET

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KEXIN

科信电子

Converter - Brake - Inverter Module (CBI1)

Features ● NPT IGBT technology Square RBSOA, no latchup ● Free wheeling diodes with Hiperfast and soft recovery behaviour ● Isolation voltage 2500 V~ ● Built in temperature sense ● High level of integration: one module for complete drive system ● Direct Copper Bonded Al2O3 ceramic base plate

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IXYS

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Enclosed Isolators 3, 4, 6 and 8 Poles

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