VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)

VCO FOR UHF/VHF BAND. FEATURES • High Capacitance Ratio : C1V/C4V =3.4(Min.) • Low Series Resistance • Excellent Linearity (CV Curve)

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

VCO for UHF/VHF Band

KEC

开益禧

Square Type

Square Type □ 3.9 mm × 1.75 mm Series

文件：31.65 Kbytes 页数：1 Pages

PANASONIC

松下

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

文件：226.31 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

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NTE