VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND

VCO FOR UHF/VHF BAND. FEATURES • High Capacitance Ratio : C1V/C4V =2.0(Typ.) • Low Series Resistance : rs=0.39 (Typ.)

文件：431.54 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

SILICON EPITAXIAL PLANAR DIODE

文件：345.31 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

VCO FOR UHF/VHF BAND.FEATURES\n● High Capacitance Ratio : C1V/C4V =2.0(Typ.)\n● Low Series Resistance : rs=0.39 (Typ.) ● High Capacitance Ratio : C1V/C4V =2.0(Typ.)\n● Low Series Resistance : rs=0.39 (Typ.);

KEC

R. F. Molded Chokes

[Ohmite Mfg. Co.]

文件：34.04 Kbytes 页数：1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

TWO CHIP INFRARED EMITTER

FEATURES • Very High Radiant Intensity • Two Chip Device • Grey Oval Plastic Package • Equivalent to T13/4 Size • Matches with Photodiodes SFH 205 or BP104 or Phototransistors BP103B

文件：135.26 Kbytes 页数：2 Pages

SIEMENS

西门子

Square Type

Square Type □ 5.0 mm × 5.0 mm Series

文件：30.92 Kbytes 页数：1 Pages

Panasonic

松下