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MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODESDiodes Incorporated

美台半导体

MBR835

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBR835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MBR835

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR835

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    KB835

  • 制造商:

    Kingbright Corporation

  • 功能描述:

    Photocouplers

供应商型号品牌批号封装库存备注价格
KINGBRIGHT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
KGB
6000
面议
19
DIP/SMD
询价
KINGBRIG
24+
NA
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
KINGBRIG
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多KB835供应商 更新时间2025-7-21 9:06:00