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MBR835

8.0A SCHOTTKY BARRIER RECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODESDiodes Incorporated

达尔科技

DIODES

MBR835

Axial Lead Rectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBR835

SCHOTTKY BARRIER RECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

MBR835

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER

MBR835

8.0A SCHOTTKY BARRIER RECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

MBR835

8.0A SCHOTTKY BARRIER RECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

MBR835

Schottky Barrier Rectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

MBR835

8.0A SCHOTTKY BARRIER RECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

MBR835

High Tjm Low IRRM Schottky Barrier Diodes

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER

MBR835RL

Axial Lead Rectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBR835RL

包装:散装 封装/外壳:DO-201AA,DO-27,轴向 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY 35V 8A DO201AD

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

835

PanelMount,for5x20mmFuses

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

835

PCMount,Shocksafe5x20mmFuses

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

835

PCMount,Shocksafe5x20mmFuses

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

835

PanelMount,ShocksafeSnap-InType,5x20mmFuses

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

835

PCBmount,verticalfor5x20mmFuses

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

835A

Silicon25Vhyperabruptvaractordiodes

Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac

Zetex

Zetex Semiconductors

Zetex

835A

SILICON28VHYPERABRUPTVARACTORDIODES

Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur

Zetex

Zetex Semiconductors

Zetex

835B

SILICON28VHYPERABRUPTVARACTORDIODES

Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur

Zetex

Zetex Semiconductors

Zetex

835B

Silicon25Vhyperabruptvaractordiodes

Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac

Zetex

Zetex Semiconductors

Zetex

详细参数

  • 型号:

    MBR835

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
ONSEMI
05+
原厂原装
10081
只做全新原装真实现货供应
询价
Diodes
17+
TO-220
6200
询价
BILIN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
DIODES
23+
TO-220
10000
专做原装正品,假一罚百!
询价
MDD
21+
TO-220AC
12588
原装正品,价格优势
询价
DIODES
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
DIODES/美台
23+
TO-220
10000
公司只做原装正品
询价
DIODES/美台
23+
TO-220
89630
当天发货全新原装现货
询价
onsemi(安森美)
23+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ONSEMI
23/22+
NA
9000
代理渠道.实单必成
询价
更多MBR835供应商 更新时间2024-4-28 10:48:00