零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MBR835 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity | DIODESDiodes Incorporated 达尔科技 | ||
MBR835 | Axial Lead Rectifiers AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MBR835 | SCHOTTKY BARRIER RECTIFIER VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
MBR835 | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | ||
MBR835 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBR835 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBR835 | Schottky Barrier Rectifiers VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
MBR835 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBR835 | High Tjm Low IRRM Schottky Barrier Diodes | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | ||
Axial Lead Rectifiers AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
包装:散装 封装/外壳:DO-201AA,DO-27,轴向 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY 35V 8A DO201AD | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PanelMount,for5x20mmFuses | LittelfuseLittelfuse Inc. 力特力特公司 | |||
PCMount,Shocksafe5x20mmFuses | LittelfuseLittelfuse Inc. 力特力特公司 | |||
PCMount,Shocksafe5x20mmFuses | LittelfuseLittelfuse Inc. 力特力特公司 | |||
PanelMount,ShocksafeSnap-InType,5x20mmFuses | LittelfuseLittelfuse Inc. 力特力特公司 | |||
PCBmount,verticalfor5x20mmFuses | LittelfuseLittelfuse Inc. 力特力特公司 | |||
Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac | Zetex Zetex Semiconductors | |||
SILICON28VHYPERABRUPTVARACTORDIODES Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur | Zetex Zetex Semiconductors | |||
SILICON28VHYPERABRUPTVARACTORDIODES Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur | Zetex Zetex Semiconductors | |||
Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac | Zetex Zetex Semiconductors |
详细参数
- 型号:
MBR835
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ONSEMI |
05+ |
原厂原装 |
10081 |
只做全新原装真实现货供应 |
询价 | ||
Diodes |
17+ |
TO-220 |
6200 |
询价 | |||
BILIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
DIODES |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
MDD |
21+ |
TO-220AC |
12588 |
原装正品,价格优势 |
询价 | ||
DIODES |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
DIODES/美台 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
DIODES/美台 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
询价 | ||
onsemi(安森美) |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ONSEMI |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
询价 |
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