USB 2.0 high-speed Flash drive controller

文件：614.48 Kbytes 页数：32 Pages

STMICROELECTRONICS

意法半导体

FLASH MEMORY

GENERAL DESCRIPTION Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase

文件：1.1455 Mbytes 页数：43 Pages

SAMSUNG

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FLASH MEMORY

GENERAL DESCRIPTION Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase

文件：1.1455 Mbytes 页数：43 Pages

SAMSUNG

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FLASH MEMORY

GENERAL DESCRIPTION Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase

文件：1.1455 Mbytes 页数：43 Pages

SAMSUNG

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512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

GENERAL DESCRIPTION Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope

文件：1.07698 Mbytes 页数：41 Pages

SAMSUNG

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Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage

文件：930.49 Kbytes 页数：28 Pages

SAMSUNG

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NAND Flash Memory

Samsung

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4Gb D-die NAND Flash

Samsung

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Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage

Samsung

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