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K9F4G08U0M中文资料三星数据手册PDF规格书

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厂商型号

K9F4G08U0M

功能描述

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

文件大小

1.07698 Mbytes

页面数量

41 页

生产厂商

SAMSUNG

中文名称

三星

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2026-10-4 10:30:00

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K9F4G08U0M规格书详情

GENERAL DESCRIPTION

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0M′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

• Voltage Supply

- 2.70V ~ 3.60V

• Organization

- Memory Cell Array : (512M + 16,384K)bit x 8bit

- Data Register : (2K + 64)bit x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 20µs(Max.)

- Serial Access : 25ns(Min.)

• Fast Write Cycle Time

- Page Program time : 200µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Driven Operation

• Intelligent Copy-Back with internal 1bit/528Byte EDC

• Unique ID for Copyright Protection

• Package :

- K9F4G08U0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9K8G08U1M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

产品属性

  • 型号:

    K9F4G08U0M

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    512M x 8 Bits/1G x 8 Bits NAND Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
2026+
TSOP
15644
只做原厂原装,认准宝芯创配单专家
询价
SAMSUNG
26+
TSOP48
12800
电子元器件采购降本 30%!砍掉中间差价!
询价
SAMSUNG
26+
TSOP48
20000
原装,可BOM表配单
询价
SAMSUNG/三星
1902+
TSOP
2734
代理品牌
询价
SAMSUNG
24+
SLC
7
询价
SAMSUNG
25+
TSOP48
28000
原装正品,可来电咨询
询价
SAMSUNG
26+
TSOP-
9680
原盒原标.进口原装.支持实单 .价格优势
询价
25+
6500
专注原装芯片21年 一手货源 样品免费送
询价
SAMSUNG
22+
TSOP48
20000
公司只做原装 品质保障
询价
SAMSUNG
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价