丝印：K5N；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation. ● Epitaxial planar die construction. ● Complementary to MMST3904. ● Also available in lead free version. APPLICATIONS ● General purpose application and switching application.

文件：328.39 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：K5N；Package：SC70-5；Rail-to-rail high-speed comparator

Features • Propagation delay: 8 ns • Low current consumption: 470 μA typ. at 5 V • Rail-to-rail inputs • Push-pull outputs • Supply operation from 2.2 to 5 V • Wide temperature range: -40 °C to 125 °C • ESD tolerance: 2 kV HBM/200 V MM • Available in SOT23-5, SC70-5 and DFN8 2x2 wettable f

文件：1.25985 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：K5N；Package：DFN82x2；Rail-to-rail high-speed comparator

Features • Propagation delay: 8 ns • Low current consumption: 470 μA typ. at 5 V • Rail-to-rail inputs • Push-pull outputs • Supply operation from 2.2 to 5 V • Wide temperature range: -40 °C to 125 °C • ESD tolerance: 2 kV HBM/200 V MM • Available in SOT23-5, SC70-5 and DFN8 2x2 wettable f

文件：1.25985 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：K5N；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

文件：316.46 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：K5NQ15T；Package：SOT96-1；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits • Lo

文件：723.96 Kbytes 页数：12 Pages

NEXPERIA

安世

512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

文件：2.51188 Mbytes 页数：128 Pages

Samsung

三星

FIXED ATTENUATORS

文件：276.71 Kbytes 页数：1 Pages

MINI