MMST3906

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMST3904) Ultra-SmallSurfaceMountPackage

MMST3906

Marking：R2A；Package：SOT-346；PNP General Purpose Transistor

Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904.

MMST3906

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>-40V •IC=-200mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMST3904 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifi

MMST3906

Marking：K5N；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ●Powerdissipation. ●Epitaxialplanardieconstruction. ●ComplementarytoMMST3904. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalpurposeapplicationandswitchingapplication.

MMST3906

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●ComplementarytoMMST3904

MMST3906

PNP Small Signal Transistors

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeavailable(MMST3904) •Ultra-smallsurfacemountpackage •Marking:K5N •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •Moisu

MMST3906

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●ComplementarytoMMST3904

MMST3906

Marking：R2A；Package：SOT-346；PNP General Purpose Transistor

Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904.

MMST3906

Plastic-Encapsulate Transistors

FEATURES Powerdissipation.(PC=0.2W) Epitaxialplanardieconstruction.

MMST3906

Marking：R2A；Package：SOT-346；PNP General Purpose Transistor

Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904.