TrenchMOS??standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK5NQ15T in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Surface mount package. Applications ■ DC-DC primary side switching ■ General purpose

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PHI

飞利浦

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits • Low conduc

文件：206.53 Kbytes 页数：13 Pages

恩XP

丝印：K5NQ15T；Package：SOT96-1；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits • Lo

文件：723.96 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

N-Channel 150 V (D-S) MOSFET

文件：989.39 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS standard level FET

文件：281.84 Kbytes 页数：12 Pages

PHI

飞利浦

PHK5NQ15T - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET - Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Low conduction losses due to low on-state resistance;

Nexperia

安世