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型号	下载订购	功能描述	制造商上传企业	LOGO
K4S560432A	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A-TC/L1H	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A-TC/L1L	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A-TC/L75	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A-TC/L80	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A-TCSLASHL1H	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A-TCSLASHL1L	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A-TCSLASHL75	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A-TCSLASHL80	文件：127.52 Kbytes Page：10 Pages	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p 文件：127.52 Kbytes 页数：10 Pages	SAMSUNG 三星	SAMSUNG
K4S560432A	文件：300 bytes Page：1 Pages	16M x 4bit x 4 Banks Synchronous DRAM LVTTL	Samsung 三星	Samsung

详细参数

型号：
K4S560432A
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿（深圳）半导体有限公司	K4S560432A-TC75	SAMSUNG/三星	2447	TSOP54	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威雅利发展有限公司	K4S560432A-TC75	SAMSUNG	1049+	TSOP54	351	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市向鸿伟业电子有限公司	K4S560432A-TC1L	SAMSUNG/三星	2403+	TSSOP	11809	原装现货!欢迎随时咨询!	询价
深圳市安富世纪电子有限公司	K4S560432A-TC75	SAMSUNG	23+	TSOP54	351	全新原装正品现货,支持订货	询价
深圳市创新迹电子有限公司	K4S560432A-TC75	SAMSUNG	22+	TSOP54	20000	公司只做原装品质保障	询价
上海市鑫鸿达电子	K4S560432B-TC1L	Samsung	2022+		662	全新原装货期两周	询价
深圳市威尔健半导体有限公司	K4S560432B-TC1L	SAMSUNG/三星	23+	TSOP54	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	K4S560432B-TC1L	SAMSUNG/三星	25+	TSOP54	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	K4S560432B-TC1L	SAMSUNG/三星	23+	TSOP54	5000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市赛美科科技有限公司	K4S560432B-TC1L	Samsung		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价

更多K4S560432A供应商更新时间2026-1-27 15:01:00

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