256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：130.41 Kbytes 页数：11 Pages

SAMSUNG

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256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：130.41 Kbytes 页数：11 Pages

SAMSUNG

三星

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：130.41 Kbytes 页数：11 Pages

SAMSUNG

三星

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：130.41 Kbytes 页数：11 Pages

SAMSUNG

三星

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：130.41 Kbytes 页数：11 Pages

SAMSUNG

三星

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：130.41 Kbytes 页数：11 Pages

SAMSUNG

三星

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：130.41 Kbytes 页数：11 Pages

SAMSUNG

三星

16M x 4bit x 4 Banks Synchronous DRAM LVTTL

Samsung

三星

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

Samsung

三星