16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

文件：415.95 Kbytes 页数：21 Pages

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

文件：192.76 Kbytes 页数：21 Pages

Samsung

三星

SAMSUNG(三星半导体)
BGA-178

SAMSUNG(三星半导体)

上传：深圳市高捷芯城科技有限公司

SAMSUNG/三星
FBGA178

SAMSUNG/三星

上传：深圳市芯皇电子有限公司

SAMSUNG(三星半导体)
BGA-178

SAMSUNG(三星半导体)

上传：深圳市高捷芯城科技有限公司