丝印：K3N；Package：SOT-23；PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hig

文件：60.44 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：K3N；Package：SOT-23；40V PNP SMALL SIGNAL TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary NPN Type: MMBT3904 ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig

文件：380.14 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K3N；Package：SOT-23；40V PNP SMALL SIGNAL TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary NPN Type: MMBT3904 ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig

文件：380.14 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K3N；Package：SOT-363；S0OT-363 Plastic-Encapsulate Transistors

FEATURES * Epitaxial planar die construction *® ldeal for low power amplification and switching

文件：982.22 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：K3N；Package：SOT-23；40V PNP SMALL SIGNAL TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary NPN Type: MMBT3904 ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig

文件：380.14 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K3N；Package：SOT-23；40V PNP SMALL SIGNAL TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary NPN Type: MMBT3904 ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig

文件：380.14 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K3N；Package：SOT-363；Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Ideal for low power amplification and switching. ● Ultra-small surface mount package. ● Also available in lead free version. APPLICATIONS ● General switching and amplification.

文件：667.11 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：K3N；Package：SOT-363；Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Ideal for low power amplification and switching. ● Ultra-small surface mount package. ● Also available in lead free version. APPLICATIONS ● General switching and amplification.

文件：184.59 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：K3N；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES ·Epitaxial planar die construction ·Ideal for low power amplification and switching

文件：353.55 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：K3N；Package：SOT-23；PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：90.95 Kbytes 页数：4 Pages

DIODES

美台半导体