Applicable Cylinder Series

文件：6.95924 Mbytes 页数：92 Pages

ETCList of Unclassifed Manufacturers

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Switching Voltage Regulators

文件：249.55 Kbytes 页数：10 Pages

TOSHIBA

东芝

3.0 AMP SURFACE MOUNTSCHOTTKY BARRIER RECTIFIERS

FOSAN

富信半导体

包装：盒 描述：HEATER HEATER ELEMENT

SIEMENS

西门子

包装：盒 描述：HEATER HEATER ELEMENT

SIEMENS

西门子

包装：盒 描述：HEATER HEATER ELEMENT

SIEMENS

西门子

丝印：K39A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K39C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K39J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3.0 to 4.5 V (VDS

文件：238.72 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K39N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：240.5 Kbytes 页数：10 Pages

TOSHIBA

东芝