World Class Switching Solutions for Energy Management

Application Notes Dual Coil – Positive Polarity: Place a negative connection on T2. Then apply a 50ms positive pulse to T1 to open the contacts or to T3 to close the contacts. Dual Coil – Negative Polarity: Place a positive connection on T2. Then apply a 50ms negative pulse to T3 to open the co

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KG

World Class Switching Solutions for Energy Management

Application Notes Dual Coil – Positive Polarity: Place a negative connection on T2. Then apply a 50ms positive pulse to T1 to open the contacts or to T3 to close the contacts. Dual Coil – Negative Polarity: Place a positive connection on T2. Then apply a 50ms negative pulse to T3 to open the co

文件：243.36 Kbytes 页数：3 Pages

KG

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor per a channel. The K301 has one channel in a 4-pin mini-flat SMD package. The K302 has two channels in a 8-pin mini-flat SMD package. The K304 has four channels in a 16-

文件：203.84 Kbytes 页数：3 Pages

KODENSHI

可天士

Soft, round, 6mm dia, Hard, flat, 12mm wide, Hard, flat, 25mm wide

[VERMASON] Description: The brushes consist of a conductive plastic handle and Thunderon conductive fibres, mixed with animal hair if stiffness is desired. Resistance from the tip of the brush to the handle is less than 5 x 106 ohm. Brushes should be used by operators who are earthed

文件：262.85 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Soft, round, 6mm dia, Hard, flat, 12mm wide, Hard, flat, 25mm wide

[VERMASON] Description: The brushes consist of a conductive plastic handle and Thunderon conductive fibres, mixed with animal hair if stiffness is desired. Resistance from the tip of the brush to the handle is less than 5 x 106 ohm. Brushes should be used by operators who are earthed

文件：262.85 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Soft, round, 6mm dia, Hard, flat, 12mm wide, Hard, flat, 25mm wide

[VERMASON] Description: The brushes consist of a conductive plastic handle and Thunderon conductive fibres, mixed with animal hair if stiffness is desired. Resistance from the tip of the brush to the handle is less than 5 x 106 ohm. Brushes should be used by operators who are earthed

文件：262.85 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. FEATURES • Low On-State Resistance RDS(on)1= 45 mΩMAX. (VGS= 10 V, ID= 13 A) R

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NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP.

文件：63.92 Kbytes 页数：8 Pages

NEC

瑞萨

30A, 600V Stealth??Dual Diode

General Description The ISL9K3060G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. Features • Soft

文件：143.9 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 6 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

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HITACHIHitachi Semiconductor

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