SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP.

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NEC

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThis product is N-Channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Low On-State Resistance\nRDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A)\nRDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A)\n• Low Ciss : Ciss = 920 pF TYP.\n• Built-in Gate Pro • Low On-State Resistance\n• Low Ciss : Ciss = 920 pF TYP.\n• Isolated TO-220 package;

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