Kinetis K28F MCU Sub-Family

文件：1.05276 Mbytes 页数：87 Pages

恩XP

包装：盒 描述：HEATER HEATER ELEMENT

SIEMENS

西门子

包装：盒 描述：HEATER HEATER ELEMENT

SIEMENS

西门子

包装：盒 描述：HEATER HEATER ELEMENT

SIEMENS

西门子

丝印：K28A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：287.93 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K28E65W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：302.02 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K28N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：241.42 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K28N65W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 115 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：244.27 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K28EES5；Package：PG-TO220-3；TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full rated current RAPID 1 fast and soft anti parallel diode

文件：2.02413 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：K28B；Package：SMBF；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：228.1 Kbytes 页数：2 Pages

YIXIN

壹芯微