肖特基二极管

DOWOSEMI

东沃电子

丝印：K22A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K22C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K220；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53183 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K220；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIERRECTIFIER

Features « Low power loss, high efficiency « High forward surge current capability + High Current Capability + For surface mounted applications + Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C Applications. These Schottky barrier diodes are designed for high speed switching. ap

文件：942.77 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：K22L；Package：SOD-123FL；LOW VF S URFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Plastic package has Underwriters Laboratory Flammability classification 94V-0 Utilizing Fame Retardant Epoxy Molding Compound For surface mount applications Low leakage current.

文件：1.17552 Mbytes 页数：3 Pages

SY

顺烨电子

丝印：K22A65X；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.1 mA)

文件：444.99 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K22A65X5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.135 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.1 mA)

文件：445.51 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K220；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：K220；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

文件：2.35179 Mbytes 页数：3 Pages

LEIDITECH

雷卯电子