丝印：K22A65X；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.1 mA)

文件：444.99 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

文件：288.19 Kbytes 页数：2 Pages

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无锡固电

丝印：K22A65X5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.135 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.1 mA)

文件：445.51 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

文件：288.2 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 22 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 650 V ;

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Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 22 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V ;

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