Silver Plated CU

文件：67.89 Kbytes 页数：1 Pages

E-SWITCH

Silver Plated CU

文件：67.22 Kbytes 页数：1 Pages

E-SWITCH

Silver Plated CU

文件：67.81 Kbytes 页数：1 Pages

E-SWITCH

Silver Plated CU

文件：67.26 Kbytes 页数：1 Pages

E-SWITCH

Silver Plated CU

文件：67.75 Kbytes 页数：1 Pages

E-SWITCH

Safety Lock-off hasps

文件：137.66 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silver Plated CU

文件：69.87 Kbytes 页数：1 Pages

E-SWITCH

丝印：K200GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 200 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow

文件：1.65082 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：K200A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61

文件：493.67 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K200E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61 mA)

文件：503.23 Kbytes 页数：10 Pages

TOSHIBA

东芝