丝印：K200GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 200 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow

文件：1.65082 Mbytes 页数：17 Pages

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750 V、200 A 工业分立 EDT2 IGBT，带反并联二极管，采用 TO-247PLUS SMD 封装

\n优势:\n• Allows for increase safety margin above 400 V DC link system\n• Delamination-free package with low Rth(j-hs) after reflow soldering\n• Optimized performance in application conditions\n• Meets application requirements of a CAV application\n• Lowest conduction and switching losses\n• Improved;

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EDT2 IGBT and emitter controlled diode in TO247PLUS package

Features • VCE = 750 V • IC = 200 A • Best-in-class highest power density, IC = 200 A • 750 V collector-emitter blocking voltage capability • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems • Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C • Short circu

文件：1.34499 Mbytes 页数：16 Pages

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Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 200 A • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems • Very low VCEsat = 1.4 V (typ.) at ICnom = 200 A, 25°C • Short circuit robust tsc = 5 μs at VCE = 470 V, VGE = 15 V • Up to 40% less System Rth due to reflow capabi

文件：1.54011 Mbytes 页数：17 Pages

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Duo Pack EDT2™ IGBT and emitter controlled diode in TO247PLUS package

Features • VCE = 750 V • IC = 200 A • Best-in-class 750 V TO247 PLUS - Highest power output per device • Suitable for 470 V VDC systems and increased overvoltage margin for 400 V VDC systems • Very low VCEsat (C-KE) = 1.25 V (typ.) at ICnom = 200 A, 25°C • Short circuit robust tsc = 3 μs at

文件：1.57113 Mbytes 页数：20 Pages

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