AIKQB200N75CP2中文资料英飞凌数据手册PDF规格书

特性 Features

• VCE = 750 V

• IC = 200 A

• Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems

• Very low VCEsat = 1.4 V (typ.) at ICnom = 200 A, 25°C

• Short circuit robust tsc = 5 μs at VCE = 470 V, VGE = 15 V

• Up to 40% less System Rth due to reflow capability, increased power output

• Self limiting current under short circuit condition

• Positive thermal coefficient and very tight parameter distribution for easy paralleling

• A Reduced number of parallel devices is required due to Inom = 200 A

• Excellent current sharing in parallel operation

• Smooth switching characteristics

• Low gate charge QG

• Simple gate drive design

• Co-packed with fast soft recovery emitter controlled 3 diode

• Low EMI signature

• TO247PLUS package with high creepage distance

• High reliability and operating lifetime

• Resistive weldable pins for direct busbar connections

• Drop-in replacement for IC = 200 A, Tc = 100°C devices