AIKQ120N75CP2分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

AIKQ120N75CP2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由英飞凌科技股份公司制造生产的AIKQ120N75CP2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

特性 Features

• VCE = 750 V

• IC = 120 A

• 750 V collector-emitter blocking voltage capability

• Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems

• Very low VCE(sat), 1.30 V at ICnom = 120 A, 25°C

• Short circuit robust tsc = 5 μs at VCE = 470 V, VGE = 15 V

• Self limiting current under short circuit condition

• Positive thermal coefficient and very tight parameter distribution for easy paralleling

• Drop-in replacement for previous generation devices IC = 120 A, Tc = 100°C

• Excellent current sharing in parallel operation

• Smooth switching characteristics, low EMI signature

• Low gate charge QG

• Simple gate drive design

• Co-packed with fast soft recovery emitter controlled 3 diode

• TO247PLUS package with high creepage distance

• High reliability

Potential applications

• xEV traction inverter

• DC-link discharge switch

• Automotive aux-drives

Product validation

• Qualified for automotive applications

• Qualified according to AEC-Q101