包装：散装 类别：开关 配件 描述：SHOCK MNT BENT KEY PS21S/PS42S

Carlo Gavazzi Inc.

丝印：K17A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

文件：248.13 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K17A65W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：246.96 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K17A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85mA)

文件：414.56 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K17E65W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

文件：254.8 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K17E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85 mA)

文件：422.92 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K17N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

文件：251.58 Kbytes 页数：10 Pages

TOSHIBA

东芝

双色探测器

•宽光谱响应范围\n   适用于分光光度计，火焰监测仪等\n •非冷却型   室温操作，便于操作;

Hamamatsu

滨松光子

紫外到红外，宽光谱响应范围

K1713-05沿同一光轴将一个红外透射硅光带二极管安装在InGaAs PIN 光电二极管之上。 \n- 宽光谱响应\n- 同光路设计\n;

Hamamatsu

滨松光子

Two-color detectors

Hamamatsu

滨松光子