Surface Mount Schottky Power Rectifier

文件：37.18 Kbytes 页数：4 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

文件：43.44 Kbytes 页数：4 Pages

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安森美半导体

Schottky Power Rectifier, Surface Mount, 3.0 A, 100 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency rectificat • Small Compact Surface Mountable Package with J-Bend Leads\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Excellent Ability to Withstand Reverse Avalanche Energy Transients\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Case: Epoxy, Mol;

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安森美半导体

Package：DO-214AB，SMC；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 3A SMC

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：183.52 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：183.52 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：43.44 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：37.18 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：43.44 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：97.66 Kbytes 页数：4 Pages

ONSEMI

安森美半导体