丝印：K16C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K160GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 160 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow

文件：1.62351 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：K160F10；Package：TO-220SM；AEC-Q101 qualified

Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.0 m Ω (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth

文件：397.19 Kbytes 页数：11 Pages

TOSHIBA

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丝印：K165A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.127 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.7

文件：494 Kbytes 页数：10 Pages

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丝印：K165E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.127 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.73 mA

文件：507.1 Kbytes 页数：10 Pages

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东芝

丝印：K165U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.127 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.7

文件：514.23 Kbytes 页数：10 Pages

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丝印：K16A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3.0 to 4.5 V (VDS =

文件：248.31 Kbytes 页数：10 Pages

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丝印：K16E60W5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：254.84 Kbytes 页数：10 Pages

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丝印：K16J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：248.08 Kbytes 页数：10 Pages

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丝印：K16N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：251.13 Kbytes 页数：10 Pages

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