丝印：K16A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3.0 to 4.5 V (VDS =

文件：248.31 Kbytes 页数：10 Pages

TOSHIBA

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isc N-Channel MOSFET Transistor

文件：289.45 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15811 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 15.8 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

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