DTA114GUA

Marking：K14；Package：SOT-323；-100mA / -50V Digital transistors (with built-in resistor)

DTA114GUA

Marking：K14；Package：SOT-323；PNP -100mA -50V Digital Transistor

2SK1430

Marking：K1430；Package：TO-220ML；Very High-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-stateresistance. •Ultrahigh-speedswitching. •Converters. •Micalesspackagefacilitatingeasymounting.

IKY140N120CH7

Marking：K140MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features •VCE=1200V •IC=140A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode •LowsaturationvoltageVCEsat=1.7VatTvj=25°C •Optimizedforhighefficiencyinhighs

K1400SA

Marking：K14S；Package：SMA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

K1400SB

Marking：K14S；Package：DO-214AA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

K1400SD1

Marking：K14S；Package：SOD-123FL；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

TK14A65W5

Marking：K14A65W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.25Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=1

TK14E65W

Marking：K14E65W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.22Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.69mA)

TK14E65W5

Marking：K14E65W5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.25Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=1