丝印：K12；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K12；Package：SOD-123FL；SCHOTTKY BARRIER DIODE

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.87 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

丝印：K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.86 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K12；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.43 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：K12；Package：SOT-23；N-Enhancement Field Effect Transistor

文件：2.93609 Mbytes 页数：8 Pages

PJSEMI

平晶半导体

丝印：K12；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：1.1341 Mbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

High Performance Key Switches

Features/Benefits • Excellent tactile feel • Wide choice of LED colors, travel and actuator forces • High reliability / long life • Sealed version available • Designed for low-level switching • Double stroke version available • Detector version available

文件：563.64 Kbytes 页数：6 Pages

CK-COMPONENTS

力特

Silicon Bilateral Voltage Triggered Switch

[Ceramate] General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on

文件：101.63 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE ·Conserves battery life ·Unique manufacturing process ·Provides lowest reverse leakage currents ·Low impedance atcurrents specified at 10 mA and below

文件：34.54 Kbytes 页数：1 Pages

KNOX