首页 >JMSH0606AGQ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GRUBSCREWFIXING | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
NandP-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半导体摩矽半导体有限公司 | MORESEMI | ||
N-channelMOSFET Features •Lowon-stateresistance:RDS(on)=12.9mΩmax.(VGS=10V,ID=30A) •LowCiss:Ciss=2170pFtyp.(VDS=25V) •Highcurrent:ID(DC)=±60A •RoHSCompliant •QualityGrade:Standard •Applications:Forhighcurrentswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPhotoTransistor Structure 1.1ChipSize:0.61mmX0.61mm 1.2Chipthickness:280±20um 1.3Metallization:Top-Al,Bottom-Au 1.4Passivation:SiliconNitride 1.5BondingPadSize -Emitter:155umX155um -Base:90umX90um | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
SiliconPINPhotoDiode HighSpeedSensitivity CommoncathodetypePINPhotoDiode Structure 1.1ChipSize:0.68X0.68mm 1.2ChipThickness:280±20um 1.3Metallization:Top-Al,Bottom-Au 1.4Passivation:SiliconNitride 1.5BondingPadSize -Anode(Top):150um -Cathode(Bottom):680umX680um 1 | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
RADIALCHOKECOIL | SUPERWORLDSuperworld Electronics 超级世界电子超级世界电子公司 | SUPERWORLD | ||
SiliconNChannelMOSFETSeriesPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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